Monte Carlo Simulation of Implant Free InGaAs MOSFET
نویسنده
چکیده
Performance of n-type implant free In0.25Ga0.75As MOSFETs with Ga2O3 dielectric is investigated using ensemble Monte Carlo device simulations. The implant free MOSFET concept takes an advantage of the high mobility in III-V materials to allow operation at very high speed and low power. A 100 nm gate length implant free In0.25Ga0.75As MOSFET with a layer structure derived from heterojunction transistors may deliver a drive current of 1800 A/m and transconductance up to 1342 mS/mm. This implant free transistor is then scaled in the both lateral and vertical dimensions to gate lengths of 70 and 50 nm. The scaled devices exhibit continuous improvement in the drive current up to 2600 A/m and 3259 A/m and transconductance of 2076 mS/mm and 3192 mS/mm, respectively. This demonstrates the excellent scaling potential of the implant free MOSFET concept.
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